chopper igbt nx-series module 200 amperes/1200 volts CM200EXS-24S 1 07/12 rev. 0 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com description: powerex igbt modules are designed for use in switching applications. each module consists of one igbt transistor and one super-fast recovery diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: lo w drive power lo w v ce(sat) discrete super-fast recovery clamp diode r ohs compliant isolat ed copper baseplate for easy heat sinking applications: dc/dc c onverter dc mot or control br ake circuit ordering information: example: select the complete module number you desire from the table below -i.e. CM200EXS-24S is a 1200v (v ces ), 200 ampere chopper igbt power module. type current rating v ces amperes v olts (x 50) cm 200 24 outline drawing and circuit diagram dimensions inches millimeters a 4.09 104.0 b 2.44 62.0 c 0.47 11.9 d 3.5 89.0 e 2.44 62.0 f 0.53 13.5 g 0.69 17.66 h 0.75 19.05 j 0.14 3.8 k 0.16 4.2 l 1.97 50.0 m 0.55 14.0 n 0.87 22.0 p 2.26 57.5 q 1.83 46.5 r 2.9 73.71 s 0.8 20.5 t 0.67 17.0 dimensions inches millimeters u 0.27 7.0 v 0.67 1 7. 0 w 0.64 16.4 x 0.51 13.1 y 0.17 4.4 z 0.49 12.5 aa 0.12 3.0 ab 0.17 dia. 4.3 dia. ac 0.102 dia. 2.6 dia. ad 0.088 dia. 2.25 dia. ae 0.15 3.81 af 0.045 1.15 ag 0.025 0.65 ah 0.05 1 .2 aj 0.29 7 .4 ak 0.21 dia. 5.5 dia. al m5 m5 tr es(4) g(3) di e(7) c(2) k(8) a(1) th th1 (6) th2 (5) n t c a d e f j j z aa ab b ah aj ae ad ac af ag g h p c x t s r q n v u w ak (4 places) al (4 places) m y k l detail "a" detail "b" 34 56 2 1 7 8 tolerance otherwise specified (mm) the tolerance of size between terminals is assumed to 0.4 division of dimension tolerance 0.5 to 3 0.2 over 3 to 6 0.3 over 6 to 30 0.5 over 30 to 120 0.8 over 120 to 400 1. 2
CM200EXS-24S chopper igbt nx-series module 200 amperes/1200 volts 2 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 07/12 rev. 0 absolute maximum ratings, t j = 25c unless otherwise specifed characteristics symbol rating units collector-emitter voltage (v ge = 0v) v ces 1200 volts gate-emitter voltage (v ce = 0v) v ges 20 volts collector current (dc, t c = 119c) *2 i c 200 amperes collector current (pulse, repetitive) *3 i crm 400 amperes total power dissipation (t c = 25c) *2,*4 p tot 1500 watts repetitive peak reverse voltage (clamp diode part, v ge = 0v) v rrm 1200 volts forward current (clamp diode part, t c = 25c) *2,*4 i f *1 200 amperes forward current (clamp diode part, pulse, repetitive) *3 i frm *1 400 amperes maximum junction temperature t j(max) +175 c operating junction temperature t j(op) -40 to +150 c storage temperature t stg -40 to +125 c case temperature t c -40 to +125 c isolation voltage (terminals to baseplate, f = 60hz, ac 1 minute) v iso 2500 volts *1 represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode. *2 case temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance should be measured just under the chips. *3 pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating. *4 junction temperature (t j ) should not increase beyond maximum junction temperature (t j(max) ) rating. 18.9 40.4 51.1 label side each mark points to the center position of each chip. tr: igbt di: clamp diode th: ntc thermistor 0 0 36.9 37.5 37.9 th tr di
CM200EXS-24S chopper igbt nx-series module 200 amperes/1200 volts 3 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 07/12 rev. 0 electrical characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units collector-emitter cutoff current i ces v ce = v ces , v ge = 0v 1 ma gate-emitter leakage current i ges v ge = v ges , v ce = 0v 0.5 a gate-emitter threshold voltage v ge(th) i c = 20ma, v ce = 10v 5.4 6 6.6 volts collector-emitter saturation voltage v ce(sat) i c = 200a, v ge = 15v, t j = 25c *6 1.80 2.25 volts (terminal) i c = 200a, v ge = 15v, t j = 125c *6 2.00 volts i c = 200a, v ge = 15v, t j = 150c *6 2.05 volts collector-emitter saturation voltage v ce(sat) i c = 200a, v ge = 15v, t j = 25c *6 1.70 2.15 volts (chip) i c = 200a, v ge = 15v, t j = 125c *6 1.90 volts i c = 200a, v ge = 15v, t j = 150c *6 1.95 volts input capacitance c ies 20 nf output capacitance c oes v ce = 10v, v ge = 0v 4.0 nf reverse transfer capacitance c res 0.33 nf gate charge q g v cc = 600v, i c = 200a, v ge = 15v 466 nc turn-on delay time t d(on) 800 ns rise time t r v cc = 600v, i c = 200a, v ge = 15v, 200 ns turn-off delay time t d(off) r g = 0?, inductive load 600 ns fall time t f 300 ns repetitive peak reverse current i rrm v r = v rrm 1 ma forward voltage drop v f *1 i f = 200a, v ge = 0v, t j = 25c *6 1.80 2.25 volts clamp di part (terminal) i f = 200a, v ge = 0v, t j = 125c *6 1.80 volts i f = 200a, v ge = 0v, t j = 150c *6 1.80 volts forward voltage drop v f *1 i f = 200a, v ge = 0v, t j = 25c *6 1.70 2.15 volts clamp di part (chip) i f = 200a, v ge = 0v, t j = 125c *6 1.70 volts i f = 200a, v ge = 0v, t j = 150c *6 1.70 volts reverse recovery time t rr *1 v cc = 600v, i f = 200a, v ge = 15v 300 ns reverse recovery charge q rr *1 r g = 0?, inductive load, clamp di part 10.7 c turn-on switching energy per pulse e on v cc = 600v, i c = i f = 200a, 30.7 mj turn-off switching energy per pulse e off v ge = 15v, r g = 0?, t j = 150c, 21.5 mj reverse recovery energy per pulse e rr *1 inductive load, clamp di part 14.2 mj internal lead resistance r cc' + ee' main terminals-chip, m? per switch,t c = 25c *2 internal gate resistance r g 9.8 ? *1 represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode. *2 case temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance should be measured just under the chips. *5 pulse width and repetition rate should be such as to cause negligible temperature rise. 18.9 40.4 51.1 label side each mark points to the center position of each chip. tr: igbt di: clamp diode th: ntc thermistor 0 0 36.9 37.5 37.9 th tr di
CM200EXS-24S chopper igbt nx-series module 200 amperes/1200 volts 4 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 07/12 rev. 0 electrical characteristics, t j = 25c unless otherwise specifed (continued) ntc thermistor part characteristics symbol test conditions min. typ. max. units zero power resistance r 25 t c = 25c *2 4.85 5.00 5.15 k? deviation of resistance ? r/r t c = 100c, r 100 = 493? -7.3 +7.8 % b constant b (25/50) approximate by equation *8 3375 k power dissipation p 25 t c = 25c *2 10 mw thermal resistance characteristics thermal resistance, junction to case *2 r th(j-c) q per igbt 0.10 k/w thermal resistance, junction to case *2 r th(j-c) d per clamp diode 0.19 k/w contact thermal resistance, r th(c-f) thermal grease applied 25 k/kw case to heatsink *2 (per 1 module) *7 mechanical characteristics mounting torque m t main terminals, m5 screw 22 27 31 in-lb m s mounting to heatsink, m5 screw 22 27 31 in-lb creepage distance d s terminal to terminal 20 mm terminal to baseplate 17 mm clearance d a terminal to terminal 12 mm terminal to baseplate 10 mm weight m 210 grams flatness of baseplate e c on centerline x, y *5 -10 0 + 100 m recommended operating conditons, t a = 25c (dc) supply voltage v cc applied across p-n 600 850 volts gate-emitter drive voltage v ge(on) applied across g-e 13.5 15.0 16.5 volts external gate resistance r g 0 30 ? *2 case temperature (t c ) and heatsink temperature (t s ) is measured on the surface (mounting side) of the baseplate and the heatsink side just under the chips. refer to the figure to the right for chip location. the heatsink thermal resistance should be measured just under the chips. *5 baseplate (mounting side) flatness measurement points (x, y) are shown in the figure below. *7 typical value is measured by using thermally conductive grease of = 0.9 [w/(m ? k)]. *8 b (25/50) = in( r 25 )/( 1 C 1 ) r 50 t 25 t 50 r 25 ; resistance at absolute temperature t 25 [k]; t 25 = 25 [c] + 273.15 = 298.15 [k] r 50 ; resistance at absolute temperature t 50 [k]; t 50 = 50 [c] + 273.15 = 323.15 [k] ? : concave + : convex ? : concave x y + : convex mounting side mounting side mounting side 18.9 40.4 51.1 label side each mark points to the center position of each chip. tr: igbt di: clamp diode th: ntc thermistor 0 0 36.9 37.5 37.9 th tr di
CM200EXS-24S chopper igbt nx-series module 200 amperes/1200 volts 5 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 07/12 rev. 0 1.0 0.5 2.5 1.5 2.0 10 1 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (chip - typical) 10 2 10 3 emitter current, i e , (amperes) gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (chip - typical) 10 6 8 10 14 12 16 18 20 8 6 4 2 0 t j = 25c i c = 400a i c = 200a i c = 80a collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (chip - typical) 0 2 4 6 8 10 0 v ge = 20v 10 11 12 13.5 15 9 t j = 25 c 400 300 100 200 collector current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (chip - typical) 3.5 2.5 3.0 0 2.0 1.5 0.5 1.0 0 400 300 100 200 v ge = 15v t j = 25c t j = 125c t j = 150c v ge = 15v t j = 25c t j = 125c t j = 150c
CM200EXS-24S chopper igbt nx-series module 200 amperes/1200 volts 6 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 07/12 rev. 0 collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 0 10 2 10 2 10 1 10 0 10 -2 10 -1 10 1 c ies c oes c res 10 -1 collector current, i c , (amperes) 10 3 10 1 10 2 10 2 10 1 switching time, (ns) half-bridge switching characteristics (typical) t d(off) t d(on) t r v cc = 600v v ge = 15v r g = 0 t j = 125c inductive load t f 10 3 collector current, i c , (amperes) 10 3 10 1 10 2 10 2 10 1 half-bridge switching characteristics (typical) t d(off) t d(on) t r v cc = 600v v ge = 15v r g = 0 t j = 150c inductive load t f 10 3 external gate resistance, r g , (?) 10 3 10 1 10 2 switching time, (ns) switching time, (ns) switching time vs. gate resistance (typical) t d(off) t d(on) t r t f 10 1 10 -1 10 0 v cc = 600v v ge = 15v i c = 200a t j = 125c inductive load 10 2 v ge = 0v t j = 25c
CM200EXS-24S chopper igbt nx-series module 200 amperes/1200 volts 7 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 07/12 rev. 0 external gate resistance, r g , (?) 10 3 10 1 10 -1 10 0 10 1 10 2 switching time, (ns) switching time vs. gate resistance (typical) t d(off) t d(on) t r v cc = 600v v ge = 15v i c = 200a t j = 150c inductive load t f 10 2 gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) gate charge vs. v ge 20 0 15 10 5 0 100 200 300 700 500 600 400 i c = 200a v cc = 600v t j = 25c emitter current, i e , (amperes) reverse recovery characteristics (typical) 10 3 10 1 10 2 10 2 10 1 10 3 v cc = 600v v ge = 15v r g = 0 t j = 125c inductive load i rr t rr reverse recovery, i rr (a), t rr (ns) emitter current, i e , (amperes) reverse recovery characteristics (typical) 10 3 10 1 10 2 10 2 10 1 10 3 v cc = 600v v ge = 15v r g = 0 t j = 150c inductive load i rr t rr reverse recovery, i rr (a), t rr (ns)
CM200EXS-24S chopper igbt nx-series module 200 amperes/1200 volts 8 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 07/12 rev. 0 gate resistance, r g , (?) switching energy, e on , e off , (mj) reverse recivery energy, e rr , (mj) 10 2 10 -1 10 0 10 1 10 1 10 0 10 2 half-bridge switching characteristics (typical) v cc = 600v v ge = 15v r g = 0 t j = 125c v cc = 600v v ge = 15v r g = 0 t j = 150c v cc = 600v v ge = 15v i c /i e = 200a t j = 125c collector current, i c , (amperes) emitter current, i e , (amperes) switching energy, e on , e off , (mj) reverse recivery energy, e rr , (mj) 10 2 10 1 10 0 half-bridge switching characteristics (typical) collector current, i c , (amperes) emitter current, i e , (amperes) switching energy, e on , e off , (mj) reverse recivery energy, e rr , (mj) 10 2 10 1 10 1 10 2 10 0 10 3 half-bridge switching characteristics (typical) e on e off e rr e on e off e rr e on e off e rr gate resistance, r g , (?) switching energy, e on , e off , (mj) reverse recivery energy, e rr , (mj) 10 2 10 -1 10 0 10 1 10 1 10 0 10 2 v cc = 600v v ge = 15v i c /i e = 200a t j = 150c e on e off e rr 10 1 10 2 10 3 half-bridge switching characteristics (typical)
CM200EXS-24S chopper igbt nx-series module 200 amperes/1200 volts 9 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 07/12 rev. 0 time, (s) transient thermal impedance characteristics (maximum) 10 0 10 -5 10 -4 10 -3 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 10 -1 10 -2 10 -3 z th = r th ? (normalized value) single pulse t c = 25c per unit base = r th(j-c) = 0.10k/w (igbt) r th(j-c) = 0.19k/w (fwdi) normalized transient thermal impedance, z th(j-c')
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